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RF Device Data
Freescale Semiconductor
MRFE6VP6300HR3 MRFE6VP6300HSR3
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
?
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
NI--780--4 = R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
NI--780S--4 = R5 Suffix = 50 Units, 32 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRFE6VP6300H and MRFE6VP6300HS parts will be available for 2 years after release of
MRFE6VP6300H and MRFE6VP6300HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRFE6VP6300H
and MRFE6VP6300HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2010
?
Initial Release of Data Sheet
1
July 2011
?
Corrected pin 4 label from RFout/VGS
to RFin/VGS, Fig. 1, Pin Connections, p. 1
?
Changed Drain--Source voltage from --0.5, +125 to
--0.5, +130 in Maximum Ratings table, p. 1
?
Added Total Device Dissipation to Maximum Ratings table, p. 1
?
Changed V(BR)DSS
Min value from 125 to 130 Vdc, Table 4, Off Characteristics, p. 2
?
Tightened VGS(th)
Min limit from 1.5 to 1.7 Vdc and Max limit from 3.0 to 2.7 Vdc as a result of process
improvement, Table 4, On Characteristics, p. 2
?
Tightened VGS(Q)
Min limit from 1.7 to 2.0 Vdc and Max limit from 3.2 to 3.0 Vdc as a result of process
improvement, Table 4, On Characteristics, p. 2
?
Added Load Mismatch table to Table 4. Electrical Characteristics, p. 2
?
MTTF end temperature on graph changed to match maximum operating junction temperature, Fig. 14,
MTTF versus Junction Temperature, p. 7
?
Added Fig. 16, Simulated Source and Load Impedances Optimized for IRL, Output Power and Drain
Efficiency ? Push--Pull table, p. 9
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相关代理商/技术参数
MRFE6VP6300HSR5 功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP8600H 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
MRFE6VP8600HR5 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230H 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP8600HR6 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230H 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP8600HSR5 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230S 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP8600HSR6 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230S 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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MRFE6VS25LR5 功能描述:射频MOSFET电源晶体管 VHV6E 25W50V NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray